rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 1 of 8 SUN10A60F new generation n-ch power mosfet high speed switching application features ? low drain-source on resistance: r ds(on) =0.6 ? (typ.) ? low gate charge: q g =33nc (typ.) ? low reverse transfer capacitance: c rss =12.5pf (typ.) ? lower emi noise ? rohs compliant device ? 100% avalanche tested ordering information part number marking package SUN10A60F sun10a60 to-220f-3l marking information absolute maximum ratings (t c =25 ? c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current (dc) * i d t c =25 ? c 10 a t c =100 ? c 6.32 a drain current (pulsed) * i dm 40 a single avalanche energy (note 2) e as 545 mj repetitive avalanche current (note 1) i ar 10 a repetitive avalanche energy (note 1) e ar 3.2 mj power dissipation p d 32 w junction temperature t j 150 ? c storage temperature range t stg -55~150 ? c * limited only maximum junction temperature auk ymdd sdb20d45 auk ymdd sdb20d45 auk ymdd sun10a60 column 1: manufacturer column 2: production information e.g.) ymdd -. : option code -. : factory management code -. ymdd: date code (year, month, daily) -. : package option code column 3: device code to-220f-3l g d s
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 3.9 ? c/w thermal resistance, junction to ambient r th(j-a) max. 62.5 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 600 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 3 - 5 v drain-source cut-off current i dss v ds =600v, v gs =0v - - 1 ua v ds =600v, t c =150 ? c - - 100 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =5a - 0.6 0.75 ? forward transfer conductance (note 3) g fs v ds =10v, i d =5a - 11 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 2150 - pf output capacitance c oss - 141 - reverse transfer capacitance c rss - 12.5 - turn-on delay time (note 3,4) t d(on) v ds =300v, i d =10a, r g =25 ? - 106 - ns rise time (note 3,4) t r - 46 - turn-off delay time (note 3,4) t d(off) - 201 - fall time (note 3,4) t f - 46 - total gate charge (note 3,4) q g v ds =480v, v gs =10v, i d =10a - 33 44 nc gate-source charge (note 3,4) q gs - 13 - gate-drain charge (note 3,4) q gd - 8 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 10 a source current (pulsed) i sm - - 40 a forward voltage v sd v gs =0v, i sd =10a - - 1.4 v reverse recovery time (note 3,4) t rr i sd =10a, v gs =0v di f /dt=100a/us - 467 - ns reverse recovery charge (note 3,4) q rr - 2.85 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=10mh, i as =10a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. pulse test: pulse width 300us, duty cycle 2% 4. essentially independent of operat ing temperature typical characteristics SUN10A60F
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 3 of 8 typical electrical characteristics curves fig. 1 typical output characteristics fig. 2 typical transfer characteristics fig.3 on-resistance variation with drain current and gate voltage fig. 4 body diode forward voltage variation with source current fig. 5 typical capacitance characteristics fig. 6 typical total gate charge characteristics SUN10A60F
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 4 of 8 SUN10A60F fig. 7 breakdown voltage variation vs. temperature fig. 8 on-resistance variation vs. temperature fig. 9 maximum drain current vs. case temperature fig. 10 maximum safe operating area fig. 11 transient thermal impedance
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 5 of 8 fig. 13 resistive switching test circuit & waveform fig. 14 e as test circuit & waveform fig. 12 gate charge test circuit & waveform SUN10A60F
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 6 of 8 fig. 15 diode reverse recovery time test circuit & waveform SUN10A60F
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 7 of 8 package outline dimensions SUN10A60F
rev. date: 20-aug-14 ksd-t0o158-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication eq uipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equipm ents without prior consultation with auk corp.. specifications mentioned in this publicat ion are subject to change without notice. SUN10A60F
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